PART |
Description |
Maker |
SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
FDT86113LZ |
100V N-Channel PowerTrenchMOSFET N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
|
Fairchild Semiconductor
|
BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管(N通道增强模式逻辑层次额定雪崩 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA N-hannel Enhancement-ode Logic Level SOT23 From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MHF60SGS MHF60SGL MHF20SGL MHF20SGS MHF16SGL MHF16 |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
FCS-D264SG FCS-D234SG FCS30SG FCS-D226SG FCS14SG F |
.100 IDC SOCKET .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
MHF-20 MHF-40 MHF-34-SGL MHF-10 MHF-50 MHF-30 MHF- |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
MHF24SGL MHF24SGS MHF30SGL MHF30SGS MHF40SGL MHF40 |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
MTD6P10E ON2515 MTD6P10E-T4 |
6 A, 100 V, 0.66 ohm, P-CHANNEL, Si, POWER, MOSFET TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
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